ec76 p4kexxx peak pulse 400w stand-off voltage 6.8 to 550v e-cmos corp. ( www.ecmos.com.tw ) page 1 of 6 5a19n rev.f001 features plastic package has underwriters laboratory flammability classification 94v-0 class passivated junction 400w peak pulse power capability on 10/1000us waveform, repetition rate (duty cycle): 0.01% excellent clamping capability low incremental surge resistance very fast response soldering guaranteed: 265 /10 seconds, 0.375(9.5mm) lead length, 5lbs. (2.3kg ) tension mechanical date case : jedec do-204al(do-41) molded plastic body over passivated junction terminals: axial leads, solderable per mil-std-750, method 2026 polarity: for unidirectional types the color band denotes the cathode, which is positive with resp ect to the anode under normal tvs operation mounting position: any weight : 0.012oz, 0.3g absolute maximum ratings (ratings at 2 5 ambient temperature unless otherwise specified.) notes: 1. non-repetitive current pulse, per fig.3 a nd derated above t a =2 5 per fig. 2. 2. mounted on 1.6 x 1.6" (40 x 40 mm) pe r fig. 5. 3. measured on 8.3ms single half sine-wave or equiv alent square wave, duty cycle = 4 pulses per minute maximum 4. v f =3.5 v for devices of v (br) < 220v, and v f =5.0 volt max. for devices of v (br) >220v parameter symbol value unit peak pulse power dissipation with a 10/1000 us wave form (1,2) (see fig. 1) p ppm 400 w peak pulse current with a 10/1000 us waveform (1) i ppm see next table a steady state power dissipation at t l =75 , lead lengths 0.375" (9.5mm) (2) p m(av) 1.0 w peak forward surge current 8.3ms single half sine-w ave uni-directional only (3) i fsm 40 a maximum instantaneous forward voltage @ 25a for uni directional only (4) v f 3.5/5.0 v typical thermal resistance, junction to ambient , l lead =10mm r ja 100 /w typical thermal resistance, junction to lead r jl 60 /w operating junction and storage temperature range t j ,t stg -55 to +175 ec76p4ke6.8 thru 550
ec76 p4kexxx peak pulse 400w stand-off voltage 6.8 to 550v e-cmos corp. ( www.ecmos.com.tw ) page 2 of 6 5a19n rev.f001 electrical characteristics breakdown voltage v (br) (volts) (1) device type min. max. test current at i t (ma) stand-off voltage v wm (volts) maximum reverse leakage at v wm i d (3) (ua) maximum peak pulse current i ppm (2) (a) maximum clamping voltage at ippm v c (volts) maximum temperature coefficient of v br (% / ) ec76p4ke6.8 6.12 7.48 10 5.50 1000 37.0 10.8 0.057 ec76p4ke6.8a 6.45 7.14 10 5.80 1000 38.1 10.5 0.057 ec76p4ke7.5 6.75 8.25 10 6.05 500 34.2 11.7 0.062 ec76p4ke7.5a 7.13 7.88 10 6.40 500 35.4 11.3 0.061 ec76p4ke8.2 7.38 9.02 10 6.63 200 32.0 12.5 0.065 ec76p4ke8.2a 7.79 8.61 10 7.02 200 33.1 12.1 0.065 ec76p4ke9.1 8.19 10.0 1.0 7.37 50 29.0 13.8 0.068 ec76p4ke9.1a 8.65 9.55 1.0 7.78 50 29.9 13.4 0.068 ec76p4ke10 9.00 11.0 1.0 8.10 10 26.7 15.0 0.073 ec76p4ke10a 9.50 10.5 1.0 8.55 10 27.6 14.5 0,073 ec76p4ke11 9.90 12.1 1.0 8.92 5.0 24.7 16.2 0.075 ec76p4ke11a 10.5 11.6 1.0 9.40 5.0 25.6 15.6 0.075 ec76p4ke12 10.8 13.2 1.0 9.72 1.0 23.1 17.3 0.076 ec76p4ke12a 11.4 12.6 1.0 10.2 1.0 24.0 16.7 0.078 ec76p4ke13 11.7 14.3 1.0 10.5 1.0 21.1 19.0 0.081 ec76p4ke13a 12.4 13.7 1.0 11.1 1.0 22.0 18.2 0.081 ec76p4ke15 13.5 16.5 1.0 12.1 1.0 18.2 22.0 0.084 ec76p4ke15a 14.3 15.8 1.0 12.8 1.0 18.9 21.2 0.084 ec76p4ke16 14.4 17.6 1.0 12.9 1.0 17.0 23.5 0.086 ec76p4ke16a 15.2 16.8 1.0 13.6 1.0 17.8 22.5 0.086 ec76p4ke18 16.2 19.8 1.0 14.5 1.0 15.1 26.5 0.088 ec76p4ke18a 17.1 18.9 1.0 15.3 1.0 15.9 25.2 0.088 ec76p4ke20 18.0 22.0 1.0 16.2 1.0 13.7 29.1 0.090 ec76p4ke20a 19.0 21.0 1.0 17.1 1.0 14.4 27.7 0.090 ec76p4ke22 19.8 24.2 1.0 17.8 1.0 12.5 31.9 0.092 ec76p4ke22a 20.9 23.1 1.0 18.8 1.0 13.1 30.6 0.092 ec76p4ke24 21.6 26.4 1.0 19.4 1.0 11.5 34.7 0.094 ec76p4ke24a 22.8 25.2 1.0 20.5 1.0 12.0 33.2 0.094 ec76p4ke27 24.3 29.7 1.0 21.8 1.0 10.2 39.1 0.096 ec76p4ke27a 25.7 28.4 1.0 23.1 1.0 10.7 37.5 0.096 ec76p4ke30 27.0 33.0 1.0 24.3 1.0 9.2 43.5 0.097 ec76p4ke30a 28.5 31.5 1.0 25.6 1.0 9.7 41.4 0.097 ec76p4ke33 29.7 36.3 1.0 26.8 1.0 8.4 47.7 0.098 ec76p4ke33a 31.4 34.7 1.0 28.2 1.0 8.8 45.7 0.098 ec76p4ke36 32.4 39.6 1.0 29.1 1.0 7.7 52.0 0.099 ec76p4ke36a 34.2 37.8 1.0 30.8 1.0 8.0 49.9 0.099 ec76p4ke39 35.1 42.9 1.0 31.6 1.0 7.1 56.4 0.100 ec76p4ke39a 37.1 41.0 1.0 33.3 1.0 7.4 53.9 0.100 ec76p4ke43 38.7 47.3 1.0 34.8 1.0 6.5 61.9 0.101 ec76p4ke43a 40.9 45.2 1.0 36.8 1.0 6.7 59.3 0.101 ec76p4ke47 42.3 51.7 1.0 38.1 1.0 5.9 67.8 0.101 ec76p4ke47a 44.7 49.4 1.0 40.2 1.0 6.2 64.8 0.101
ec76 p4kexxx peak pulse 400w stand-off voltage 6.8 to 550v e-cmos corp. ( www.ecmos.com.tw ) page 3 of 6 5a19n rev.f001 breakdown voltage v (br) (volts) (1) device type min. max. test current at i t (ma) stand-off voltage v wm (volts) maximum reverse leakage at v wm i d (3) (ua) maximum peak pulse current i ppm (2) (a) maximum clamping voltage at ippm v c (volts) maximum temperature coefficient of v br (% / ) ec76p4ke51 45.9 56.1 1.0 41.3 1.0 5.4 73.5 0.102 ec76p4ke51a 48.5 53.6 1.0 43.6 1.0 5.7 70.1 0.102 ec76p4ke56 50.4 61.6 1.0 45.4 1.0 5.0 80.5 0.103 ec76p4ke56a 53.2 58.8 1.0 47.8 1.0 5.2 77.0 0.103 ec76p4ke62 55.8 68.2 1.0 50.2 1.0 4.5 89.0 0.104 ec76p4ke62a 58.9 65.1 1.0 53.0 1.0 4.7 85.0 0.104 ec76p4ke68 61.2 74.8 1.0 55.1 1.0 4.1 98.0 0.104 ec76p4ke68a 64.6 71.4 1.0 58.1 1.0 4.3 92.0 0.104 ec76p4ke75 67.5 82.5 1.0 60.7 1.0 3.7 108 0.105 ec76p4ke75a 71.3 78.8 1.0 64.1 1.0 3.9 103 0.105 ec76p4ke82 73.8 90.2 1.0 66.4 1.0 3.4 118 0.105 ec76p4ke82a 77.9 86.1 1.0 70.1 1.0 3.5 113 0.105 ec76p4ke91 81.9 100 1.0 73.7 1.0 3.1 131 0.106 ec76p4ke91a 86.5 95.5 1.0 77.8 1.0 3.2 125 0.106 ec76p4ke100 90.0 110 1.0 81.0 1.0 2.8 144 0.106 ec76p4ke100a 95.0 105 1.0 85.5 1.0 2.9 137 0.106 ec76p4ke110 99.0 121 1.0 89.2 1.0 2.5 158 0.107 ec76p4ke110a 105 116 1.0 94.0 1.0 2.6 152 0.107 ec76p4ke120 108 132 1.0 97.2 1.0 2.3 173 0.107 ec76p4ke120a 114 126 1.0 102 1.0 2.4 165 0.107 ec76p4ke130 117 143 1.0 105 1.0 2.1 187 0.107 ec76p4ke130a 124 137 1.0 111 1.0 2.2 179 0.107 ec76p4ke150 135 165 1.0 121 1.0 1.9 215 0.108 ec76p4ke150a 143 158 1.0 128 1.0 1.9 207 0.108 ec76p4ke160 144 176 1.0 130 1.0 1.7 230 0.108 ec76p4ke160a 152 168 1.0 136 1.0 1.8 219 0.108 ec76p4ke170 153 187 1.0 138 1.0 1.6 244 0.108 ec76p4ke170a 162 179 1.0 145 1.0 1.7 234 0.108 ec76p4ke180 162 198 1.0 146 1.0 1.6 258 0.108 ec76p4ke180a 171 189 1.0 154 1.0 1.6 246 0.108 ec76p4ke200 180 220 1.0 162 1.0 1.4 287 0.108 ec76p4ke200a 190 210 1.0 171 1.0 1.5 274 0.108 ec76p4ke220 198 242 1.0 175 1.0 1.2 344 0.108 ec76p4ke220a 209 231 1.0 185 1.0 1.2 328 0.108 ec76p4ke250 225 275 1.0 202 1.0 1.1 360 0.110 ec76p4ke250a 237 263 1.0 214 1.0 1.2 344 0.110 ec76p4ke300 270 330 1.0 243 1.0 0.93 430 0.110 ec76p4ke300a 285 315 1.0 256 1.0 1.0 414 0.110 ec76p4ke350 315 385 1.0 284 1.0 0.79 504 0.110 ec76p4ke350a 333 368 1.0 300 1.0 0.83 482 0.110 ec76p4ke400 360 440 1.0 324 1.0 0.70 574 0.110 ec76p4ke400a 380 420 1.0 342 1.0 0.73 548 0.110
ec76 p4kexxx peak pulse 400w stand-off voltage 6.8 to 550v e-cmos corp. ( www.ecmos.com.tw ) page 4 of 6 5a19n rev.f001 breakdown voltage v (br) (volts) (1) device type min. max. test current at i t (ma) stand-off voltage v wm (volts) maximum reverse leakage at v wm i d (3) (ua) maximum peak pulse current i ppm (2) (a) maximum clamping voltage at ippm v c (volts) maximum temperature coefficient of v br (% / ) ec76p4ke480a 456 504 1.0 408 1.0 0.61 658 0.110 ec76p4ke510a 485 535 1.0 434 1.0 0.57 698 0.110 ec76p4ke530a 503.5 556.5 1.0 450 1.0 0.55 725 0.110 ec76p4ke540a 513 567 1.0 459 1.0 0.54 740 0.110 ec76p4ke550a 522.5 577.5 1.0 467 1.0 0.52 760 0.110 ec76p4ke480a 456 504 1.0 408 1.0 0.61 658 0.110 ec76p4ke510a 485 535 1.0 434 1.0 0.57 698 0.110 ec76p4ke530a 503.5 556.5 1.0 450 1.0 0.55 725 0.110 ec76p4ke540a 513 567 1.0 459 1.0 0.54 740 0.110 ec76p4ke550a 522.5 577.5 1.0 467 1.0 0.52 760 0.110 ec76p4ke480a 456 504 1.0 408 1.0 0.61 658 0.110 ec76p4ke510a 485 535 1.0 434 1.0 0.57 698 0.110 ec76p4ke530a 503.5 556.5 1.0 450 1.0 0.55 725 0.110 ec76p4ke540a 513 567 1.0 459 1.0 0.54 740 0.110 ec76p4ke550a 522.5 577.5 1.0 467 1.0 0.52 760 0.110 notes: 1. v (br) measured after i t applied for 300us square wave pulse or equivalent 2. surge current waveform per fig. 3 and derate per fig. 2 3. for bi-directional types having vwm of 10 volts and less, the id limit is doubled 4. all terms and symbols are consistent with ansi/ieee c62.35 5. for parts without a, the v br is +10% typical performance curves
ec76 p4kexxx peak pulse 400w stand-off voltage 6.8 to 550v e-cmos corp. ( www.ecmos.com.tw ) page 5 of 6 5a19n rev.f001
ec76 p4kexxx peak pulse 400w stand-off voltage 6.8 to 550v e-cmos corp. ( www.ecmos.com.tw ) page 6 of 6 5a19n rev.f001 device package net weight carrier quantity hsf status EC76P4KEXXXa do-204al(do-41) 0.300g tape & box 3000pcs/reel rohs compliant order information ec76p4ke xxx c a stand off voltage bi - directional (without c, uni-direction) 5% voltage tolerance (without a, 5% voltage tolerance)
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